SLF65R420SJ Datasheet | Maple Semiconductor

SLP65R420SJ / SLF65R420SJ SLP65R420SJ / SLF65R420SJ 650V N-Channel MOSFET CB-FET General Description This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for AC/DC power conversion in switching mode operation for higher efficiency. Features - 11A, 650V, RDS(on) typ. = 0.38Ω@VGS = 10 V - Low gate charge ( typical 33nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability TO-220 TO-220F...