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SLF65R700SJ Datasheet N-channel MOSFET

Manufacturer: Maple Semiconductor

Overview: SLP65R700SJ/SLF65R700SJ SLP65R700SJ/SLF65R700SJ 650V N-Channel MOSFET CB-FET.

General Description

This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology.

This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for AC/DC power conversion in switching mode operation for higher efficiency.

Key Features

  • - 7A, 650V, RDS(on) typ. = 0.6Ω@VGS = 10 V - Low gate charge ( typical 25nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP65R700SJ SLF65R700SJ VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source Voltage Sing.

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SLF65R700SJ Distributor