SLI7N80C Overview
Description
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- 7.0A, 800V, RDS(on) = 1.9Ω@VGS = 10 V
- Low gate charge ( typical 40nC)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability D GS D2-PAK GDS I2-PAK G S
