Description
This Power MOSFET is producFeeadtuurseisng Maple semi‘s
Advanced Super-Junction This advanced technology
theacsh--nbL7oo.e6wlAeo,gng5ay0tee0. Vsch,paRerDgcSe(oi(na)ttylylppy.i=cat0al .5i2lΩo5n@rCeV)dGS
=
10
V
to minimize conduction loss, pr-oHvigihdreugsguedpneesrsior switching performance, and withstand hig-- F1h0a0set%nswaevitracghlaiynngcpheutlessetedin the avalanche and commutation m-oImdpero.ved dv/dt capability
These devices are well suited for AC/DC power conversion
SLD80R600SJ,
Features
- -10A, 800V, RDS(on) typ. = 0.55Ω@VGS = 10 V
- Low gate charge ( typical - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
35nC)
DD
GDS
TO-220
GDS
TO-220F
GDS
DD
D2-PAK GS
GS
D-PAK
GDS
I2-PAK
I-PAK
G S
Absolute Maximum Ratings
TC = 25°C unless otherwise noted
Symbol
Parameter
D2-PAK/D-PAK I2-PAK / I-.
SLI80R600SJ Datasheet
