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SLI80R850SJ - N-Channel MOSFET

Download the SLI80R850SJ datasheet PDF. This datasheet also covers the SLD-80R-850 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

theacsh--nb7Lo.oe6wlAeo,gng5a0ytee0.

Vsch,paRerDgcSe(oi(na)ttlyylppy.

Key Features

  • -7A, 800V, RDS(on) typ. = 0.8Ω@VGS = 10 V - Low gate charge ( typical - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability 25nC) DD GDS TO-220 GDS TO-220F GDS DD D2-PAK GS GS D-PAK GDS I2-PAK I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter D2-PAK/D-PAK I2-PAK / I-.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SLD-80R-850-SJ.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SLI80R850SJ
Manufacturer Maple Semiconductor
File Size 618.57 KB
Description N-Channel MOSFET
Datasheet download datasheet SLI80R850SJ Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SLB/D/F/I/P /U80R850SJ General Description This Power MOSFET is producFeeadtuurseisng Maple semi‘s Advanced Super-Junction This advanced technology theacsh--nb7Lo.oe6wlAeo,gng5a0ytee0. Vsch,paRerDgcSe(oi(na)ttlyylppy. i=cat0al .5i2lΩo5@nrCeV)dGS = 10 V to minimize conduction loss, pr-oHvigihdreugsguedpneesrsior switching performance, and withstand hig-- F1h0a0set%nswaevitracghlaiynngcpheutlessetedin the avalanche and commutation m-oImdpero.ved dv/dt capability These devices are well suited for AC/DC power conversion SLD80R850SJ,SLU80R850SJ,SLP80R850SJ SLF80R850SJ, SLB80R850SJ, SLI80R850SJ 800V N-Channel MOSFET Features -7A, 800V, RDS(on) typ.= 0.