Description
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.
Features
- - 5.0A, 500V, RDS(on) = 1.35Ω@VGS = 10 V - Low gate charge ( typical 26nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
D
D TO-262
TO-261
G
GS
GDS
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
SLB830S
SLI830S
VDSS
ID
IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG
TL
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed
(Note 1)
Gate-So.
SLI830S Datasheet
