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SLP11N35UZ - N-Channel MOSFET

Product Overview

Maple Semiconductor

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SLP11N35UZ N-Channel MOSFET by Maple Semiconductor - Datasheet Preview — Datasheet preview – SLP11N35UZ

Datasheet Details

Part number	SLP11N35UZ
Manufacturer	Maple Semiconductor
File Size	319.70 KB
Description	N-Channel MOSFET
Datasheet	SLP11N35UZ Datasheet
Additional preview pages of the SLP11N35UZ datasheet.

Product details

Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

Features

- 11A, 350V, RDS(on)typ. = 0.460Ω@VGS = 10 V - Low gate charge ( typical 29nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Sourc.

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Published: Apr 11, 2017 |