SLP11N35UZ - N-Channel MOSFET

Product Overview

Maple Semiconductor

Datasheet Details

Part number	SLP11N35UZ
Manufacturer	Maple Semiconductor
File Size	319.70 KB
Description	N-Channel MOSFET
Datasheet	SLP11N35UZ Datasheet
Additional preview pages of the SLP11N35UZ datasheet.

SLP11N35UZ Product details

Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

- 11A, 350V, RDS(on)typ. = 0.460Ω@VGS = 10 V - Low gate charge ( typical 29nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Sourc.

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Published: Apr 11, 2017 |