SLP4N60S - N-Channel MOSFET

Product Overview

Maple Semiconductor

Datasheet Details

Part number	SLP4N60S
Manufacturer	Maple Semiconductor
File Size	574.64 KB
Description	N-Channel MOSFET
Datasheet	SLP4N60S Datasheet
Additional preview pages of the SLP4N60S datasheet.

SLP4N60S Product details

Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

- 4.0A, 600V, RDS(on)Typ= 2.0Ω@VGS = 10 V - Low gate charge ( typical 13.3nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP4N60S SLF4N60S VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Aval.

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Published: Dec 28, 2018 |