Datasheet Details
| Part number | SLP4N65C |
|---|---|
| Manufacturer | Maple Semiconductor |
| File Size | 303.25 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 SLP4N65C Datasheet
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General Description
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- - 4A, 650V, RDS(on)typ. = 2.32Ω@VGS = 10 V - Low gate charge ( typical 13nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP4N65C SLF4N65C VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Ga.