SLP60R190SJ Datasheet | Maple Semiconductor

SLP60R190SJ / SLF60R190SJ SLP60R190SJ / SLF60R190SJ 600V N-Channel MOSFET CB-FET General Description This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for AC/DC power conversion in switching mode operation for higher efficiency. Features - 20A, 600V, RDS(on) typ. = 0.16Ω@VGS = 10 V - Low gate charge ( typical 70n C) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability TO-220 TO-220F...