SLP60R190SJ - N-Channel MOSFET

Product Overview

Maple Semiconductor

Part number	SLP60R190SJ
Manufacturer	Maple Semiconductor
File Size	922.35 KB
Description	N-Channel MOSFET
Datasheet	SLP60R190SJ Datasheet
Additional preview pages of the SLP60R190SJ datasheet.

This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology.

- 20A, 600V, RDS(on) typ. = 0.16Ω@VGS = 10 V - Low gate charge ( typical 70nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avala.

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Published: Apr 11, 2017 |