SLP60R650SJ - N-Channel MOSFET

Product Overview

Maple Semiconductor

Datasheet Details

Part number	SLP60R650SJ
Manufacturer	Maple Semiconductor
File Size	766.51 KB
Description	N-Channel MOSFET
Datasheet	SLP60R650SJ Datasheet
Additional preview pages of the SLP60R650SJ datasheet.

SLP60R650SJ Product details

Description

This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology.

This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

- 7A, 600V, RDS(on) typ. = 0.58Ω@VGS = 10 V - Low gate charge ( typical 25nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP60R650SJ SLF60R650SJ VDSS ID IDM VGSS Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed Gate-Source Voltage (Note 1) 600 7 7.
5 5.
10 10.
±30.

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Published: Apr 11, 2017 |