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SLP80R500SJ - N-Channel MOSFET

Download the SLP80R500SJ datasheet PDF. This datasheet also covers the SLD-80R-500 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

theacsh--nb7Lo.oe6wlAeo,gng5a0ytee0.

Vsch,paRerDgcSe(oi(na)ttlyylppy.

Key Features

  • -11A, 800V, RDS(on) typ. = 0.46Ω@VGS = 10 V - Low gate charge ( typical - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability 38nC) DD GDS TO-220 GDS TO-220F GDS DD D2-PAK GS GS D-PAK GDS I2-PAK I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter D2-PAK/D-PAK I2-PAK /.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SLD-80R-500-SJ.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SLP80R500SJ
Manufacturer Maple Semiconductor
File Size 629.86 KB
Description N-Channel MOSFET
Datasheet download datasheet SLP80R500SJ Datasheet

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Other Datasheets by Maple Semiconductor

Part Number Description
SLP80R240SJ N-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SLB/D/F/I/P /U80R500SJ General Description This Power MOSFET is producFeeadtuurseisng Maple semi‘s Advanced Super-Junction This advanced technology theacsh--nb7Lo.oe6wlAeo,gng5a0ytee0. Vsch,paRerDgcSe(oi(na)ttlyylppy. i=cat0al .5i2lΩo5@nrCeV)dGS = 10 V to minimize conduction loss, pr-oHvigihdreugsguedpneesrsior switching performance, and withstand hig-- F1h0a0set%nswaevitracghlaiynngcpheutlessetedin the avalanche and commutation m-oImdpero.ved dv/dt capability These devices are well suited for AC/DC power conversion SLD80R500SJ,SLU80R500SJ,SLP80R500SJ SLF80R500SJ, SLB80R500SJ, SLI80R500SJ 800V N-Channel MOSFET Features -11A, 800V, RDS(on) typ.= 0.