SLP80R600SJ Datasheet | Maple Semiconductor

SLB/D/F/I/P /U80R600SJ General Description This Power MOSFET is produc Feeadtuurseisng Maple semi‘s Advanced Super-Junction This advanced technology theacsh--nb L7oo.e6wl Aeo,gng5ay0tee0. Vsch,pa Rer Dgc Se(oi(na)ttylylppy. i=cat0al .5i2lΩo5n@r Ce V)d GS = V to minimize conduction loss, pr-o Hvigihdreugsguedpneesrsior switching performance, and withstand hig-- F1h0a0set%nswaevitracghlaiynngcpheutlessetedin the avalanche and mutation m-o Imdpero.ved dv/dt capability These devices are well suited for AC/DC power conversion SLD80R600SJ,SLU80R600SJ,SLP80R600SJ SLF80R600SJ, SLB80R600SJ, SLI80R600SJ 800V N-Channel MOSFET Features -10A, 800V, RDS(on) typ.= 0.55Ω@VGS = 10 V - Low gate charge ( typical - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability 35n C) TO-220 TO-220F D2-PAK GS D-PAK I2-PAK I-PAK...