SLU6N70U Overview
Description
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- 4.8A, 700V, RDS(on) typ = 1.8Ω@VGS = 10 V
- Low gate charge ( typical 16nC)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability D D GS D-PAK GDS I-PAK G S
