Description
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.
Features
- - 5.0A, 500V, RDS(on)Typ= 1.35Ω@VGS = 10 V - Low gate charge ( typical 26nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
D
D D-PAK
I-PAK
G
GS
GDS
S
Absolute Maximum Ratings TC = 25 ℃ unless otherwise noted
Symbol
Parameter
SLU830S
SLD830S
VDSS
ID
IDM VGSS EAS
Drain-Source Voltage
Drain Current - Continuous (TC = 25℃)
Drain Current
- Continuous (TC = 100℃) - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche.
SLU830S Datasheet
