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SLU830S - N-Channel MOSFET

Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • - 5.0A, 500V, RDS(on)Typ= 1.35Ω@VGS = 10 V - Low gate charge ( typical 26nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D-PAK I-PAK G GS GDS S Absolute Maximum Ratings TC = 25 ℃ unless otherwise noted Symbol Parameter SLU830S SLD830S VDSS ID IDM VGSS EAS Drain-Source Voltage Drain Current - Continuous (TC = 25℃) Drain Current - Continuous (TC = 100℃) - Pulsed Gate-Source Voltage Single Pulsed Avalanche.

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Datasheet Details

Part number SLU830S
Manufacturer Maple Semiconductor
File Size 646.27 KB
Description N-Channel MOSFET
Datasheet download datasheet SLU830S Datasheet
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Full PDF Text Transcription

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SLD830S / SLU830S SLD830S / SLU830S 500V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features - 5.0A, 500V, RDS(on)Typ= 1.
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