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SLU830UZ - N-Channel MOSFET

Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • - 4.5A, 550V, RDS(on) typ. = 1.0Ω@VGS = 10V - Low gate charge ( typical 16.3nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GS D-PAK GDS I-PAK Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Single.

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Datasheet Details

Part number SLU830UZ
Manufacturer Maple Semiconductor
File Size 301.13 KB
Description N-Channel MOSFET
Datasheet download datasheet SLU830UZ Datasheet
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SLD830UZ / SLU830UZ SLD830UZ / SLU830UZ 550V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features - 4.5A, 550V, RDS(on) typ. = 1.0Ω@VGS = 10V - Low gate charge ( typical 16.
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