Marktech Corporate MTD8000P
Photo Transistor
FEATURES
High Reliability in Demanding Environments Narrow Angular ResponseAPPLICATIONS
Optical Switches Optical Sensors Edge Sensing Smoke DetectorsMAXIMUM RATINGS
(Ta=25 C) Characteristic Collector Power Dissipation Collector−Emitter Voltage Emitter−Collector Voltage Collector Current Operating Temperature Storage Temperature Junction Temperature Soldering Temperature Symbol PC VCE VEC IC Topr Tstg Tj Tsol Max. 250 30 5 50 −30~+100 −40~+125 125 260 Test Condition − − − − − − − for 5 sec. max o o Unit mW V V mA o o o o C C C C Opto−ELECTRICAL CHARACTERISTICS
(Ta=25 C) Characteristic C−E Saturation Voltage Light Current Dark Current Spectral Sensitivity Peak Sensitivity Wavelength Beam Angle Rise Time Fall Time Symbol VCE(sat) IL ID λ λp θ Tr Tf Test Condition Ic=0.2mA Ee=5mW/cm2 Vce=20V, Ee=0.5mW/cm Vce=20V, Ee=0mW/cm − − − RL=100Ω ,Vce=5V,Ic=0.5mA RL=100Ω ,Vce=5V,Ic=0.5mA 2 2 Min − − − − − − − − Typ .20 3.00 − 400~1100 880 ± 12 o Max − − 100 − − − − − Unit µA µA nA µA V deg. ns ns...