Marktech Corporate MTD8000W
Photo Transistor
FEATURES
High Reliability in Demanding EnvironmentsAPPLICATIONS
Optical Switches Optical Sensors Optical Detectors Fiber Optic CommunicationsMAXIMUM RATINGS
(Ta=25 C) Characteristic Collector Power Dissipation Collector−Emitter Voltage Emitter−Collector Voltage Collector Current Operating Temperature Storage Temperature Junction Temperature Soldering Temperature Symbol PC VCE VEC IC Topr Tstg Tj Tsol Max. 250 30 5 50 −30~+100 −40~+125 125 260 Test Condition − − − − − − − for 5 sec. max o o Unit mW V V mA o o o o C C C C Opto−ELECTRICAL CHARACTERISTICS
(Ta=25 C) Characteristic C−E Saturation Voltage Light Current Dark Current Spectral Sensitivity Peak Sensitivity Wavelength Beam Angle Rise Time Fall Time Symbol VCE(sat) IL ID λ λp θ Tr Tf Test Condition Ic=0.2mA Ee=5mW/cm 2 2 Min − − − − − − − − Typ .20 1.00 − 400~1100 880 ± 55 o Max − − 100 − − − − − Unit µA µA nA µA V deg. ns ns Vce=20V,Ee=0.5 mW/cm Vce=20V, Ee = 0mW/cm2 − − − RL=100Ω ,Vce=5V,Ic=0.5mA RL=100Ω ,Vce=5V,Ic=0.5mA 10000.