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ME1303AT3-G - P-Channel Enhancement Mode Mosfet

This page provides the datasheet information for the ME1303AT3-G, a member of the ME1303AT3 P-Channel Enhancement Mode Mosfet family.

Description

The ME1303AT3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • -20V/-3.4A,RDS(ON)=95mΩ@VGS=-4.5V.
  • -20V/-2.4A,RDS(ON)=120mΩ@VGS=-2.5V.
  • -20V/-1.7A,RDS(ON)=180mΩ@VGS=-1.8V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet preview – ME1303AT3-G

Datasheet Details

Part number ME1303AT3-G
Manufacturer Matsuki
File Size 965.01 KB
Description P-Channel Enhancement Mode Mosfet
Datasheet download datasheet ME1303AT3-G Datasheet
Additional preview pages of the ME1303AT3-G datasheet.

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Full PDF Text Transcription

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P-Channel Enhancement MOSFET ME1303AT3/ME1303AT3-G GENERAL DESCRIPTION The ME1303AT3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOT-323) Top View FEATURES ● -20V/-3.4A,RDS(ON)=95mΩ@VGS=-4.5V ● -20V/-2.4A,RDS(ON)=120mΩ@VGS=-2.5V ● -20V/-1.7A,RDS(ON)=180mΩ@VGS=-1.
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