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ME1303S - P-Channel 20V (D-S) MOSFET

Description

The ME1303S is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON) ≦95mΩ@VGS=-4.5V.
  • RDS(ON) ≦120mΩ@VGS=-2.5V.
  • RDS(ON) ≦180mΩ@VGS=-1.8V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet preview – ME1303S

Datasheet Details

Part number ME1303S
Manufacturer Matsuki
File Size 970.85 KB
Description P-Channel 20V (D-S) MOSFET
Datasheet download datasheet ME1303S Datasheet
Additional preview pages of the ME1303S datasheet.

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Full PDF Text Transcription

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P-Channel 20V (D-S) MOSFET Preliminary-ME1303S/ME1303S-G GENERAL DESCRIPTION The ME1303S is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. FEATURES ● RDS(ON) ≦95mΩ@VGS=-4.5V ● RDS(ON) ≦120mΩ@VGS=-2.5V ● RDS(ON) ≦180mΩ@VGS=-1.
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