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ME1304AT3-G - N-Channel 20V (D-S) MOSFET

This page provides the datasheet information for the ME1304AT3-G, a member of the ME1304AT3 N-Channel 20V (D-S) MOSFET family.

Description

The ME1304AT3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON) ≦ 65 mΩ @VGS=4.5V.
  • RDS(ON) ≦ 80 mΩ @VGS=2.5V.
  • RDS(ON) ≦ 95 mΩ @VGS=1.8V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet preview – ME1304AT3-G

Datasheet Details

Part number ME1304AT3-G
Manufacturer Matsuki
File Size 1.43 MB
Description N-Channel 20V (D-S) MOSFET
Datasheet download datasheet ME1304AT3-G Datasheet
Additional preview pages of the ME1304AT3-G datasheet.

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Full PDF Text Transcription

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N-Channel 20-V (D-S) MOSFET ME1304AT3/ME1304AT3-G GENERAL DESCRIPTION The ME1304AT3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SC70-3L) Top View FEATURES ● RDS(ON) ≦ 65 mΩ @VGS=4.5V ● RDS(ON) ≦ 80 mΩ @VGS=2.5V ● RDS(ON) ≦ 95 mΩ @VGS=1.
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