ME13N10A-G
DESCRIPTION
The ME13N10A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
FEATURES
- RDS(ON) ≦145mΩ@VGS=10V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
APPLICATIONS
- DC/DC Converter
- Load Switch
- LCD/ LED Display inverter
PIN CONFIGURATION
(TO-252-3L) Top View
- The Ordering Information: ME13N10A (Pb-free) ME13N10A-G (Green product-Halogen free )
Absolute Maximum Ratings (Tc=25℃ Unless...
