Datasheet Details
| Part number | ME13N10A |
|---|---|
| Manufacturer | Matsuki |
| File Size | 943.03 KB |
| Description | N-Channel 100V (D-S) MOSFET |
| Datasheet | ME13N10A-Matsuki.pdf |
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Overview: ME13N10A/ME13N10A-G N- Channel 100V (D-S) MOSFET GENERAL.
| Part number | ME13N10A |
|---|---|
| Manufacturer | Matsuki |
| File Size | 943.03 KB |
| Description | N-Channel 100V (D-S) MOSFET |
| Datasheet | ME13N10A-Matsuki.pdf |
|
|
|
The ME13N10A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Compare ME13N10A distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Part Number | Description |
|---|---|
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