Datasheet4U Logo Datasheet4U.com
Matsuki logo

ME16P10-G Datasheet

Manufacturer: Matsuki

This datasheet includes multiple variants, all published together in a single manufacturer document.

ME16P10-G datasheet preview

Datasheet Details

Part number ME16P10-G
Datasheet ME16P10-G ME16P10 Datasheet (PDF)
File Size 1.05 MB
Manufacturer Matsuki
Description P-Channel 100V (D-S) MOSFET
ME16P10-G page 2 ME16P10-G page 3

ME16P10-G Overview

The ME16P10 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench.

ME16P10-G Key Features

  • RDS(ON)≦195mΩ@VGS=-10V
  • RDS(ON)≦210mΩ@VGS=-4.5V
  • Super high density cell design for extremely low RDS(ON)
  • Exceptional on-resistance and maximum DC current

ME16P10-G Applications

  • Power Management in Note book

ME16P10 from other manufacturers

See all manufacturers

Brand Logo Part Number Description Other Manufacturers
VBsemi Logo ME16P10 P-Channel MOSFET VBsemi
Matsuki logo - Manufacturer

More Datasheets from Matsuki

See all Matsuki datasheets

Part Number Description
ME16P10 P-Channel 100V (D-S) MOSFET
ME100N03T N-Channel MOSFET
ME100N03T-G N-Channel MOSFET
ME100N15T-G N-Channel MOSFET
ME10N15 N-Channel MOSFET
ME10N15-G N-Channel MOSFET
ME1117 1A Low Dropout Voltage Regulator
ME1117-1.8 1A Low Dropout Voltage Regulator
ME1117-2.5 1A Low Dropout Voltage Regulator
ME1117-3.3 1A Low Dropout Voltage Regulator

ME16P10-G Distributor

Datasheet4U Logo
Since 2006. D4U Semicon. About Datasheet4U Contact Us Privacy Policy Purchase of parts