Datasheet4U Logo Datasheet4U.com

ME16P10 - P-Channel 100V (D-S) MOSFET

Description

The ME16P10 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench

Features

  • RDS(ON)≦195mΩ@VGS=-10V.
  • RDS(ON)≦210mΩ@VGS=-4.5V technology. This high density process is especially tailored to.
  • Super high density cell design for extremely low RDS(ON) minimize on-state resistance. These devices are particularly suited.
  • Exceptional on-resistance and maximum DC current for low voltage.

📥 Download Datasheet

Datasheet preview – ME16P10

Datasheet Details

Part number ME16P10
Manufacturer Matsuki
File Size 1.05 MB
Description P-Channel 100V (D-S) MOSFET
Datasheet download datasheet ME16P10 Datasheet
Additional preview pages of the ME16P10 datasheet.

📁 Similar Datasheet

  • ME16P10 - P-Channel MOSFET (VBsemi)
  • ME1117 - 1.0A Adjustable Voltage High Speed LDO Regulators (Microne)
  • ME1117A12 - 1.0A Adjustable Voltage High Speed LDO Regulators (Microne)
  • ME1117A18 - 1.0A Adjustable Voltage High Speed LDO Regulators (Microne)
  • ME1117A25 - 1.0A Adjustable Voltage High Speed LDO Regulators (Microne)
  • ME1117A33 - 1.0A Adjustable Voltage High Speed LDO Regulators (Microne)
  • ME1117A50 - 1.0A Adjustable Voltage High Speed LDO Regulators (Microne)
  • ME1117F - 1.0A Adjustable Voltage High Speed LDO Regulators (Microne)
  • ME12629B-R - BLUE SIDE BACKLIGHT (Micro Electronics)
  • ME1502 - 5V USB High-Side Adjustable Door Limit Current Load Switch (ChipSourceTek)
Other Datasheets by Matsuki

Full PDF Text Transcription

Click to expand full text
ME16P10/ME16P10-G P- Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION The ME16P10 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench FEATURES ● RDS(ON)≦195mΩ@VGS=-10V ● RDS(ON)≦210mΩ@VGS=-4.5V technology. This high density process is especially tailored to ● Super high density cell design for extremely low RDS(ON) minimize on-state resistance. These devices are particularly suited ● Exceptional on-resistance and maximum DC current for low voltage application such as cellular phone and notebook capability computer power management and other battery powered circuits , and low in-line power loss are needed in a very small outline surface mount package.
Published: |