ME16P10 Description
The ME16P10 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench.
ME16P10 Key Features
- RDS(ON)≦195mΩ@VGS=-10V
- RDS(ON)≦210mΩ@VGS=-4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current
ME16P10 Applications
- Power Management in Note book