ME20P06-G
Description
The ME20P06 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
Key Features
- RDS(ON)≦78mΩ@VGS=-10V
- RDS(ON)≦100mΩ@VGS=-4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current
Applications
- Power Management in Note book
