ME20P06-G - P-Channel MOSFET

Matsuki

Download the ME20P06-G datasheet PDF. This datasheet also covers the ME20P06 variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The ME20P06 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

RDS(ON)≦78mΩ@VGS=-10V.
RDS(ON)≦100mΩ@VGS=-4.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

ME20P06-G p-channel mosfet by Matsuki - Datasheet Preview — Note: The manufacturer provides a single datasheet file (ME20P06-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	ME20P06-G
Manufacturer	Matsuki
File Size	1.16 MB
Description	P-Channel MOSFET
Datasheet	ME20P06-G Datasheet

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Other Datasheets by Matsuki

Part Number	Description
ME20P06	P-Channel MOSFET
ME20P06P	P-Channel MOSFET
ME20P06P-G	P-Channel MOSFET
ME20P03	P-Channel MOSFET
ME20P03-G	P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

ME20P06/ME20P06-G P- Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION The ME20P06 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION FEATURES ● RDS(ON)≦78mΩ@VGS=-10V ● RDS(ON)≦100mΩ@VGS=-4.