Datasheet Details
| Part number | ME2301DC-G |
|---|---|
| Manufacturer | Matsuki |
| File Size | 732.65 KB |
| Description | P-Channel 20V (D-S) MOSFET |
| Datasheet | ME2301DC-G ME2301DC Datasheet (PDF) |
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Overview: ME2301DC/ME2301DC-G P-Channel 20V(D-S) MOSFET, ESD Protected.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | ME2301DC-G |
|---|---|
| Manufacturer | Matsuki |
| File Size | 732.65 KB |
| Description | P-Channel 20V (D-S) MOSFET |
| Datasheet | ME2301DC-G ME2301DC Datasheet (PDF) |
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The ME2301DC is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where low in-line power loss are needed in a very small outline surface mount package.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
ME2301D | P-Channel MOSFET | VBsemi |
| Part Number | Description |
|---|---|
| ME2301DC | P-Channel 20V (D-S) MOSFET |
| ME2301 | P-Channel Enhancement Mode Mosfet |
| ME2301-G | P-Channel Enhancement Mode Mosfet |
| ME2301A | P-Channel 20V (D-S) MOSFET |
| ME2301A-G | P-Channel 20V (D-S) MOSFET |
| ME2301GC | P-Channel 20V (D-S) MOSFET |
| ME2301GC-G | P-Channel 20V (D-S) MOSFET |
| ME2302 | N-Channel 20V (D-S) MOSFET |
| ME2302-G | N-Channel 20V (D-S) MOSFET |
| ME2302D | N-Channel 20V (D-S) MOSFET |