ME2309-G Datasheet | Matsuki

P-Channel 60V (D-S) MOSFET GENERAL DESCRIPTION The ME2309 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOT-23) Top View ME2309/ ME2309-G Features - RDS(ON)≦215mΩ@VGS=-10V - RDS(ON)≦260mΩ@VGS=-4.5V - Super high density cell design for...