ME2317D-G Description
The ME2317D-G is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where switching and low...
ME2317D-G Key Features
- RDS(ON) ≦45mΩ@VGS=-10V
- RDS(ON) ≦53mΩ@VGS=-4.5V
- RDS(ON) ≦80mΩ@VGS=-2.5V
- Typical ESD performance 3KV
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current
ME2317D-G Applications
- Power Management in Note book