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ME2317D-G Datasheet P-channel 30v (d-s) MOSFET

Manufacturer: Matsuki

Overview: P-Channel 30V (D-S) MOSFET GENERAL.

Datasheet Details

Part number ME2317D-G
Manufacturer Matsuki
File Size 958.44 KB
Description P-Channel 30V (D-S) MOSFET
Datasheet ME2317D-G-Matsuki.pdf

General Description

The ME2317D-G is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where switching and low in-line power loss are needed in a very small outline surface mount package.

Key Features

  • RDS(ON) ≦45mΩ@VGS=-10V.
  • RDS(ON) ≦53mΩ@VGS=-4.5V.
  • RDS(ON) ≦80mΩ@VGS=-2.5V.
  • Typical ESD performance 3KV.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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ME2317D-G Distributor