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ME2318-G Datasheet N-channel 20v (d-s) MOSFET

Manufacturer: Matsuki

Overview: N-Channel 20-V (D-S) MOSFET GENERAL.

Datasheet Details

Part number ME2318-G
Manufacturer Matsuki
File Size 0.97 MB
Description N-Channel 20V (D-S) MOSFET
Datasheet ME2318-G-Matsuki.pdf

General Description

The ME2318-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.

Key Features

  • RDS(ON)≦34mΩ@VGS=4.5V.
  • RDS(ON)≦45mΩ@VGS=2.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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ME2318-G Distributor