ME2320D-G datasheet by Matsuki.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | ME2320D-G |
|---|---|
| Datasheet | ME2320D-G ME2320D Datasheet (PDF) |
| File Size | 896.89 KB |
| Manufacturer | Matsuki |
| Description | N-Channel 20V (D-S) MOSFET |
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The ME2320D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching and...
| Part Number | Description |
|---|---|
| ME2320D | N-Channel 20V (D-S) MOSFET |
| ME2320DS | N-Channel 20V (D-S) MOSFET |
| ME2320DS-G | N-Channel 20V (D-S) MOSFET |
| ME2322 | N-Channel 55V (D-S) MOSFET |
| ME2322-G | N-Channel 55V (D-S) MOSFET |
| ME2323D | P-Channel 20V (D-S) MOSFET |
| ME2323D-G | P-Channel 20V (D-S) MOSFET |
| ME2325 | P-Channel 30V (D-S) MOSFET |
| ME2325-G | P-Channel 30V (D-S) MOSFET |
| ME2301 | P-Channel Enhancement Mode Mosfet |
