Datasheet4U.com

ME2320DS-G - N-Channel 20V (D-S) MOSFET

This page provides the datasheet information for the ME2320DS-G, a member of the ME2320DS N-Channel 20V (D-S) MOSFET family.

Product Overview

Matsuki

📥 Download Datasheet

ME2320DS-G N-Channel 20V (D-S) MOSFET by Matsuki - Datasheet Preview — Datasheet preview – ME2320DS-G

Datasheet Details

Part number	ME2320DS-G
Manufacturer	Matsuki
File Size	1.24 MB
Description	N-Channel 20V (D-S) MOSFET
Datasheet	ME2320DS-G Datasheet
Additional preview pages of the ME2320DS-G datasheet.

ME2320DS-G Product details

Description

The ME2320DS is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

RDS(ON)=21mΩ@VGS=4.5V.
RDS(ON)=25 mΩ@VGS=2.5V.
RDS(ON)=33 mΩ@VGS=1.8V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

📁 Similar Datasheet

ME2323D - P-Channel MOSFET (VBsemi)
ME2324D - N-Channel MOSFET (VBsemi)
ME2325 - P-Channel 30V MOSFET (VBsemi)
ME2301D - P-Channel MOSFET (VBsemi)
ME2303 - P-Channel MOSFET (VBsemi)
ME2305 - P-Channel MOSFET (HAOHAI)
ME2306 - N-Channel MOSFET (VBsemi)
ME2345A - P-Channel MOSFET (VBsemi)
ME2-CH2O-16x15 - Electrochemical Formaldehyde Sensor (Winsen)
ME2-CH2O-D16 - Electrochemical Formaldehyde Sensor (Winsen)

Other Datasheets by Matsuki

ME2320DS - N-Channel 20V (D-S) MOSFET
ME2320D - N-Channel 20V (D-S) MOSFET
ME2320D-G - N-Channel 20V (D-S) MOSFET
ME2322 - N-Channel 55V (D-S) MOSFET
ME2322-G - N-Channel 55V (D-S) MOSFET
ME2323D - P-Channel 20V (D-S) MOSFET
ME2323D-G - P-Channel 20V (D-S) MOSFET
ME2325 - P-Channel 30V (D-S) MOSFET

Published: Mar 20, 2018 |