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ME2345-G - P-Channel Enhancement Mode Mosfet

This page provides the datasheet information for the ME2345-G, a member of the ME2345 P-Channel Enhancement Mode Mosfet family.

Product Overview

Matsuki

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ME2345-G P-Channel Enhancement Mode Mosfet by Matsuki - Datasheet Preview — Datasheet preview – ME2345-G

Datasheet Details

Part number	ME2345-G
Manufacturer	Matsuki
File Size	0.99 MB
Description	P-Channel Enhancement Mode Mosfet
Datasheet	ME2345-G Datasheet
Additional preview pages of the ME2345-G datasheet.

ME2345-G Product details

Description

The ME2345 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

RDS(ON) ≦65mΩ@VGS=-10V.
RDS(ON) ≦75mΩ@VGS=-4.5V.
RDS(ON) ≦105mΩ@VGS=-2.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

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Other Datasheets by Matsuki

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Published: May 17, 2016 |