Datasheet Details
| Part number | ME35N06-G |
|---|---|
| Manufacturer | Matsuki |
| File Size | 1.57 MB |
| Description | N-Channel 60V (D-S) MOSFET |
| Datasheet | ME35N06-G ME35N06 Datasheet (PDF) |
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Overview: N-Channel 60-V (D-S) MOSFET ME35N06/ME35N06-G GENERAL.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | ME35N06-G |
|---|---|
| Manufacturer | Matsuki |
| File Size | 1.57 MB |
| Description | N-Channel 60V (D-S) MOSFET |
| Datasheet | ME35N06-G ME35N06 Datasheet (PDF) |
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The ME35N06-G is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on state resistance.
These devices are particularly suited for low voltage application such as cellular phone, notebook puter power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
ME35N06G | N-Channel MOSFET | VBsemi |
| Part Number | Description |
|---|---|
| ME35N06 | N-Channel 60V (D-S) MOSFET |
| ME35N06F | N-Channel 60V (D-S) MOSFET |
| ME35N06F-G | N-Channel 60V (D-S) MOSFET |
| ME35N06P | N-Channel 60V (D-S) MOSFET |
| ME35N06P-G | N-Channel 60V (D-S) MOSFET |
| ME35N06T | N-Channel 60V (D-S) MOSFET |
| ME35N06T-G | N-Channel 60V (D-S) MOSFET |
| ME35N10 | N-Channel 100V (D-S) MOSFET |
| ME35N10-G | N-Channel 100V (D-S) MOSFET |
| ME3500 | N- & P-Channel 30V (D-S) MOSFET |