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ME35N06-G - N-Channel 60V (D-S) MOSFET

This page provides the datasheet information for the ME35N06-G, a member of the ME35N06 N-Channel 60V (D-S) MOSFET family.

Datasheet Summary

Description

The ME35N06-G is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on state resistance.

Features

  • RDS(ON)≦32mΩ@VGS=10V.
  • RDS(ON)≦40mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet preview – ME35N06-G

Datasheet Details

Part number ME35N06-G
Manufacturer Matsuki
File Size 1.57 MB
Description N-Channel 60V (D-S) MOSFET
Datasheet download datasheet ME35N06-G Datasheet
Additional preview pages of the ME35N06-G datasheet.

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Full PDF Text Transcription

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N-Channel 60-V (D-S) MOSFET ME35N06/ME35N06-G GENERAL DESCRIPTION The ME35N06-G is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package. PIN CONFIGURATION FEATURES ● RDS(ON)≦32mΩ@VGS=10V ● RDS(ON)≦40mΩ@VGS=4.
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