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ME35N06-G - N-Channel 60V (D-S) MOSFET

Download the ME35N06-G datasheet PDF. This datasheet also covers the ME35N06 variant, as both devices belong to the same n-channel 60v (d-s) mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The ME35N06-G is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on state resistance.

Key Features

  • RDS(ON)≦32mΩ@VGS=10V.
  • RDS(ON)≦40mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ME35N06-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ME35N06-G
Manufacturer Matsuki
File Size 1.57 MB
Description N-Channel 60V (D-S) MOSFET
Datasheet download datasheet ME35N06-G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N-Channel 60-V (D-S) MOSFET ME35N06/ME35N06-G GENERAL DESCRIPTION The ME35N06-G is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package. PIN CONFIGURATION FEATURES ● RDS(ON)≦32mΩ@VGS=10V ● RDS(ON)≦40mΩ@VGS=4.