ME35N06-G
ME35N06-G is N-Channel 60V (D-S) MOSFET manufactured by Matsuki.
- Part of the ME35N06 comparator family.
- Part of the ME35N06 comparator family.
DESCRIPTION
The ME35N06-G is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook puter power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package.
PIN CONFIGURATION
FEATURES
- RDS(ON)≦32mΩ@VGS=10V
- RDS(ON)≦40mΩ@VGS=4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
APPLICATIONS
- Power Management in Note book
- DC/DC Converter
- Load Switch
- LCD Display inverter
(TO-252-3L) Top View
The Ordering Information: ME35N06/ME35N06-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25℃ Unless...
