ME35N06G - N-Channel MOSFET

Datasheet Summary

Features

TrenchFET® Power MOSFET.
175 °C Junction Temperature D Available RoHS.

VBsemi

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Datasheet Details

Part number	ME35N06G
Manufacturer	VBsemi
File Size	337.24 KB
Description	N-Channel MOSFET
Datasheet	ME35N06G Datasheet
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ME35N06G ME35N06G Datasheet N-Channel 6 0-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 60 rDS(on) (Ω) 0.025 at VGS = 10 V 0.030 at VGS = 4.5 V TO-252 ID (A)a 45 40 FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature D Available RoHS* COMPLIANT GDS Top View Drain Connected to Tab G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20 V Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 100 °C ID 45 35 Pulsed Drain Current IDM 100 A Continuous Source Current (Diode Conduction) IS 23 Avalanche Current IAS 20 Single Avalanche Energy (Duty Cycle ≤ 1 %) L = 0.

Published: Oct 17, 2024 |