ME35N06 Datasheet PDF - Matsuki N-Channel 60V (D-S) MOSFET Specs

ME35N06 - N-Channel 60V (D-S) MOSFET

Datasheet Summary

Description

The ME35N06-G is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on state resistance.

Features

RDS(ON)≦32mΩ@VGS=10V.
RDS(ON)≦40mΩ@VGS=4.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

Datasheet Details

Part number	ME35N06
Manufacturer	Matsuki
File Size	1.57 MB
Description	N-Channel 60V (D-S) MOSFET
Datasheet	ME35N06 Datasheet
Additional preview pages of the ME35N06 datasheet.

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Full PDF Text Transcription

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N-Channel 60-V (D-S) MOSFET ME35N06/ME35N06-G GENERAL DESCRIPTION The ME35N06-G is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package. PIN CONFIGURATION FEATURES ● RDS(ON)≦32mΩ@VGS=10V ● RDS(ON)≦40mΩ@VGS=4.

Published: Mar 20, 2018 |