ME35N06 Overview
The ME35N06-G is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook puter power management and other battery powered circuits, and low in-line power loss that are needed...
ME35N06 Key Features
- RDS(ON)≦32mΩ@VGS=10V
- RDS(ON)≦40mΩ@VGS=4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current
ME35N06 Applications
- Power Management in Note book
