ME35N06F-G

Manufacturer: Matsuki

ME35N06F-G datasheet by Matsuki.

This datasheet includes multiple variants, all published together in a single manufacturer document.

ME35N06F-G Datasheet Details

Part number	ME35N06F-G
Datasheet	ME35N06F-G ME35N06F Datasheet (PDF)
File Size	872.57 KB
Manufacturer	Matsuki
Description	N-Channel 60V (D-S) MOSFET

ME35N06F-G Overview

The ME35N06F is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance.

ME35N06F-G Key Features

RDS(ON)≦32mΩ@VGS=10V
RDS(ON)≦40mΩ@VGS=4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current

ME35N06F-G Applications

Power Management in Note book

ME35N06G from other manufacturers

View ME35N06G datasheet index

Brand Logo	Part Number	Description	Other Manufacturers
	ME35N06G	N-Channel MOSFET	VBsemi

More Datasheets from Matsuki

View all Matsuki datasheets

Part Number	Description
ME35N06F	N-Channel 60V (D-S) MOSFET
ME35N06	N-Channel 60V (D-S) MOSFET
ME35N06-G	N-Channel 60V (D-S) MOSFET
ME35N06P	N-Channel 60V (D-S) MOSFET
ME35N06P-G	N-Channel 60V (D-S) MOSFET
ME35N06T	N-Channel 60V (D-S) MOSFET
ME35N06T-G	N-Channel 60V (D-S) MOSFET
ME35N10	N-Channel 100V (D-S) MOSFET
ME35N10-G	N-Channel 100V (D-S) MOSFET
ME3500	N- & P-Channel 30V (D-S) MOSFET