ME35N06F-G Description
The ME35N06F is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance.
ME35N06F-G Key Features
- RDS(ON)≦32mΩ@VGS=10V
- RDS(ON)≦40mΩ@VGS=4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current
ME35N06F-G Applications
- Power Management in Note book