ME35N06T-G Datasheet | Matsuki

DESCRIPTION The ME35N06T is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. PIN CONFIGURATION (TO-220) Top View ME35N06T/ME35N06T-G FEATURES - RDS(ON)≦32mΩ@VGS=10V - RDS(ON)≦40mΩ@VGS=4.5V - Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance and maximum DC current capability APPLICATIONS - Power Management in Note book - DC/DC Converter - Load Switch - LCD Display inverter e Ordering Information: ME35N06T (Pb-free) ME35N06T-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC=25℃ TC=70℃ Pulsed Drain Current Maximum Power Dissipation TC=25℃ TC=70℃ Operating Junction Temperature Thermal Resistance-Junction to Case -...