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ME35N06T-G - N-Channel 60V (D-S) MOSFET

This page provides the datasheet information for the ME35N06T-G, a member of the ME35N06T N-Channel 60V (D-S) MOSFET family.

Datasheet Summary

Description

The ME35N06T is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on state resistance.

Features

  • RDS(ON)≦32mΩ@VGS=10V.
  • RDS(ON)≦40mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet preview – ME35N06T-G

Datasheet Details

Part number ME35N06T-G
Manufacturer Matsuki
File Size 702.16 KB
Description N-Channel 60V (D-S) MOSFET
Datasheet download datasheet ME35N06T-G Datasheet
Additional preview pages of the ME35N06T-G datasheet.

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Full PDF Text Transcription

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N-Channel 60V (D-S) MOSFET GENERAL DESCRIPTION The ME35N06T is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. PIN CONFIGURATION (TO-220) Top View ME35N06T/ME35N06T-G FEATURES ● RDS(ON)≦32mΩ@VGS=10V ● RDS(ON)≦40mΩ@VGS=4.
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