ME35N06T
ME35N06T is N-Channel 60V (D-S) MOSFET manufactured by Matsuki.
DESCRIPTION
The ME35N06T is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance.
PIN CONFIGURATION
(TO-220) Top View
ME35N06T/ME35N06T-G
FEATURES
- RDS(ON)≦32mΩ@VGS=10V
- RDS(ON)≦40mΩ@VGS=4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
APPLICATIONS
- Power Management in Note book
- DC/DC Converter
- Load Switch
- LCD Display inverter e Ordering Information: ME35N06T (Pb-free)
ME35N06T-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TC=25℃ TC=70℃
Pulsed Drain Current
Maximum Power Dissipation
TC=25℃ TC=70℃
Operating Junction Temperature
Thermal Resistance-Junction to Case
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