ME4456-G Datasheet | Matsuki

DESCRIPTION The ME4456 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION ME4456/ME4456-G FEATURES - RDS(ON)≦24mΩ@VGS=10V - RDS(ON)≦39mΩ@VGS=4.5V - Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance and maximum DC current capability APPLICATIONS - Power Management in Note book - Battery Powered System - DC/DC Converter - Load Switch (SOP-8) Top View e Ordering Information: ME4456 (Pb-free) ME4456-G (Green product- Halogen free) Absolute...