ME4566-G Datasheet | Matsuki

DESCRIPTION The ME4566 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOP-8) Top View ME4566/ME4566-G FEATURES - RDS(ON)≦34mΩ@VGS=10V (N-Ch) - RDS(ON)≦42mΩ@VGS=4.5V (N-Ch) - RDS(ON)≦66mΩ@VGS=-10V (P-Ch) - RDS(ON)≦86mΩ@VGS=-4.5V (P-Ch) - Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance and maximum DC current capability APPLICATIONS - Power Management - DC/DC Converter - LCD TV & Monitor Display inverter - CCFL...