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ME4812B Datasheet N-channel 30-v(d-s) MOSFET

Manufacturer: Matsuki

Overview: ME4812B/ME4812B-G N-Channel 30-V (D-S) MOSFET Integrated Schottky Diode.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The ME4812B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.

Key Features

  • RDS(ON)≦12mΩ@VGS=10V.
  • RDS(ON)≦21mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

More Datasheets from Matsuki

Part Number Description
ME4812B-G N-Channel 30-V(D-S) MOSFET
ME4812 N-Channel 30-V(D-S) MOSFET
ME4812-G N-Channel 30-V(D-S) MOSFET
ME4856 N-Channel 30-V(D-S) MOSFET
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ME4894 N-Channel 30-V(D-S) MOSFET
ME4894-G N-Channel 30-V(D-S) MOSFET
ME40P03T P-Channel MOSFET
ME40P03T-G P-Channel MOSFET
ME4174 N-Channel 30V (D-S) MOSFET

ME4812B Distributor