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ME4812B - N-Channel 30-V(D-S) MOSFET

Download the ME4812B datasheet PDF. This datasheet also covers the ME4812BB variant, as both devices belong to the same n-channel 30-v(d-s) mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The ME4812B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • RDS(ON)≦12mΩ@VGS=10V.
  • RDS(ON)≦21mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ME4812BB-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ME4812B
Manufacturer Matsuki
File Size 636.19 KB
Description N-Channel 30-V(D-S) MOSFET
Datasheet download datasheet ME4812B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ME4812B/ME4812B-G N-Channel 30-V (D-S) MOSFET Integrated Schottky Diode GENERAL DESCRIPTION The ME4812B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. FEATURES ● RDS(ON)≦12mΩ@VGS=10V ● RDS(ON)≦21mΩ@VGS=4.