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ME4856 - N-Channel 30-V(D-S) MOSFET

General Description

The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • RDS(ON)≦6mΩ@VGS=10V.
  • RDS(ON)≦8.5mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet Details

Part number ME4856
Manufacturer Matsuki
File Size 664.76 KB
Description N-Channel 30-V(D-S) MOSFET
Datasheet download datasheet ME4856 Datasheet

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N-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. ME4856 FEATURES ● RDS(ON)≦6mΩ@VGS=10V ● RDS(ON)≦8.5mΩ@VGS=4.