Datasheet Details
| Part number | ME4856 |
|---|---|
| Manufacturer | Matsuki |
| File Size | 664.76 KB |
| Description | N-Channel 30-V(D-S) MOSFET |
| Datasheet | ME4856-Matsuki.pdf |
|
|
Overview: N-Channel 30-V(D-S) MOSFET GENERAL.
| Part number | ME4856 |
|---|---|
| Manufacturer | Matsuki |
| File Size | 664.76 KB |
| Description | N-Channel 30-V(D-S) MOSFET |
| Datasheet | ME4856-Matsuki.pdf |
|
|
|
The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
ME4856 | N-Channel 30C MOSFET | VBsemi |
| Part Number | Description |
|---|---|
| ME4856-G | N-Channel 30-V(D-S) MOSFET |
| ME4812 | N-Channel 30-V(D-S) MOSFET |
| ME4812-G | N-Channel 30-V(D-S) MOSFET |
| ME4812B | N-Channel 30-V(D-S) MOSFET |
| ME4812B-G | N-Channel 30-V(D-S) MOSFET |
| ME4894 | N-Channel 30-V(D-S) MOSFET |
| ME4894-G | N-Channel 30-V(D-S) MOSFET |
| ME40P03T | P-Channel MOSFET |
| ME40P03T-G | P-Channel MOSFET |
| ME4174 | N-Channel 30V (D-S) MOSFET |