Matsuki ME4856
The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.| Part No. | ME4856 |
|---|---|
| Datasheet | ME4856 Download |
| Manufacturer |  Matsuki |
| Description | N-Channel 30-V(D-S) MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
ME4856FEATURES
● RDS(ON)≦6mΩ@VGS=10V● RDS(ON)≦8.5mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability
APPLICATIONS
● Power Management in Note book● Battery Powered System
● DC/DC Converter
● Load Switch PIN CONFIGURATION (SOP-8) Top View
ABSOLUTE MAXIMUM RATINGS
(TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current( TJ =150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Pulse Source-Drain Diode Current Maximum Power Dissipation TA=25℃ TA=70℃ Operating Junction Temperature Thermal Resistance-Junction to Ambient* thermal Resistance-Junction to Case * The device mounted on 1in2 FR4 board with 2 oz copper Symbol VDSS VGSS ID IDM IS ISM PD TJ RθJA RθJC Limit 30 ±20 17 14 50 2.7 50 3.0 2.0 -55 to 150 T≦10 sec 30 Steady State 34 60 July, 2008-Ver4.0 Unit V V A A A A W ℃ ℃/W ℃/W 01 N-Channel 30-V(D-S) MOS...
