| Part Number | ME4856 |
|---|---|
| Manufacturer | VBsemi |
| Overview |
ME4856-VB
ME4856-VB Datasheet
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30
0.004 at VGS = 10 V
0.005 at VGS = 4.5 V
ID (A)a 18 16
Qg (Typ.) 6.8 nC
FEATU.
* Halogen-free * Trench Power MOSFET * Optimized for High-Side Synchronous Rectifier Operation * 100 % Rg Tested * 100 % UIS Tested S1 S2 S3 G4 SO-8 8D 7D 6D 5D APPLICATIONS * Notebook CPU Core - High-Side Switch D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless othe. |
ME4856 Datasheet
The ME4856 is a N-Channel 30C MOSFET.
| Part Number | ME4856 |
|---|---|
| Description | N-Channel 30-V(D-S) MOSFET |
| Manufacturer | Matsuki |
| Overview |
The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to min.
* RDS(ON)≦6mΩ@VGS=10V * RDS(ON)≦8.5mΩ@VGS=4.5V * Super high density cell design for extremely low RDS(ON) * Exceptional on-resistance and maximum DC current capability APPLICATIONS * Power Management in Note book * Battery Powered System * DC/DC Converter * Load Switch PIN CONFIGURATION (SOP-8) Top. |