ME4920-G - Dual N-Channel MOSFET

Matsuki

Download the ME4920-G datasheet PDF. This datasheet also covers the ME4920 variant, as both devices belong to the same dual n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The ME4920 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on state resistance.

Key Features

RDS(ON)≦35 mΩ@VGS=10V.
RDS(ON)≦45 mΩ@VGS=4.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

ME4920-G dual n-channel mosfet by Matsuki - Datasheet Preview — Note: The manufacturer provides a single datasheet file (ME4920-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	ME4920-G
Manufacturer	Matsuki
File Size	428.87 KB
Description	Dual N-Channel MOSFET
Datasheet	ME4920-G Datasheet

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Other Datasheets by Matsuki

Part Number	Description
ME4920	Dual N-Channel MOSFET
ME4920D	Dual N-Channel MOSFET
ME4920D-G	Dual N-Channel MOSFET
ME4925	Dual P-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Dual N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME4920 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package. PIN CONFIGURATION (SOP-8) Top View ME4920/ME4920-G FEATURES ● RDS(ON)≦35 mΩ@VGS=10V ● RDS(ON)≦45 mΩ@VGS=4.