ME4920D
Overview
The ME4920D-G is the Dual N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench high density process is especially tailored to minimize on state devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package.
- RDS(ON)≦30 mΩ@VGS=10V
- RDS(ON)≦40 mΩ@VGS=4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
