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ME4920D - Dual N-Channel MOSFET

General Description

The ME4920D-G is the Dual N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on state resistance.These devices are particularly suited for low voltage application such as cellul

Key Features

  • RDS(ON)≦30 mΩ@VGS=10V.
  • RDS(ON)≦40 mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet Details

Part number ME4920D
Manufacturer Matsuki
File Size 1.14 MB
Description Dual N-Channel MOSFET
Datasheet download datasheet ME4920D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ME4920D /ME4920D-G Dual N-Channel 30-V (D-S) MOSFET, ESD Protection GENERAL DESCRIPTION The ME4920D-G is the Dual N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on state resistance.These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package. PIN CONFIGURATION FEATURES ● RDS(ON)≦30 mΩ@VGS=10V ● RDS(ON)≦40 mΩ@VGS=4.