ME4953 Key Features
- RDS(ON)≦60mΩ@VGS=-10V
- RDS(ON)≦90mΩ@VGS=-4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
| Part Number | Description |
|---|---|
| ME4953-G | Dual P-Channel MOSFET |
| ME4950 | Dual N-Channel MOSFET |
| ME4950-G | Dual N-Channel MOSFET |
| ME4952 | Dual N-Channel MOSFET |
| ME4952-G | Dual N-Channel MOSFET |