ME4956-G Overview
The ME4956 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side...
ME4956-G Key Features
- RDS(ON)≦116mΩ@VGS=10V (N-Ch)
- RDS(ON)≦133mΩ@VGS=4.5V (N-Ch)
- RDS(ON)≦215mΩ@VGS=-10V (P-Ch)
- RDS(ON)≦225mΩ@VGS=-4.5V (P-Ch)
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current