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ME50P06P-G - P-Channel MOSFET

This page provides the datasheet information for the ME50P06P-G, a member of the ME50P06P P-Channel MOSFET family.

Datasheet Summary

Description

The ME50P06P is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦17mΩ@VGS=-10V.
  • RDS(ON)≦20mΩ@VGS=-4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet preview – ME50P06P-G

Datasheet Details

Part number ME50P06P-G
Manufacturer Matsuki
File Size 0.98 MB
Description P-Channel MOSFET
Datasheet download datasheet ME50P06P-G Datasheet
Additional preview pages of the ME50P06P-G datasheet.

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Full PDF Text Transcription

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P- Channel 60-V (D-S) MOSFET ME50P06P/ME50P06P-G GENERAL DESCRIPTION The ME50P06P is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION FEATURES ● RDS(ON)≦17mΩ@VGS=-10V ● RDS(ON)≦20mΩ@VGS=-4.
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