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ME5937ED-G - Dual P-Channel MOSFET

Download the ME5937ED-G datasheet PDF. This datasheet also covers the ME5937ED variant, as both devices belong to the same dual p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The ME5937ED is the Dual P-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.

Key Features

  • RDS(ON)≦62mΩ@VGS=-4.5V.
  • RDS(ON)≦77mΩ@VGS=-2.5V.
  • RDS(ON)≦110mΩ@VGS=-1.8V.
  • RDS(ON)≦180mΩ@VGS=-1.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ME5937ED-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ME5937ED-G
Manufacturer Matsuki
File Size 920.03 KB
Description Dual P-Channel MOSFET
Datasheet download datasheet ME5937ED-G Datasheet

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Other Datasheets by Matsuki

Part Number Description
ME5937ED Dual P-Channel MOSFET
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ME50N06A N-Channel MOSFET
ME50N06A-G N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ME5937ED/ ME5937ED-G Dual P-Channel 12-V (D-S) MOSFET，ESD Protected GENERAL DESCRIPTION The ME5937ED is the Dual P-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and lower power loss that are needed in a very small outline surface mount package. PIN CONFIGURATION (DFN 2x3 NEP) Top Vie w FEATURES ● RDS(ON)≦62mΩ@VGS=-4.5V ● RDS(ON)≦77mΩ@VGS=-2.5V ● RDS(ON)≦110mΩ@VGS=-1.8V ● RDS(ON)≦180mΩ@VGS=-1.