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ME5937ED-G - Dual P-Channel MOSFET

This page provides the datasheet information for the ME5937ED-G, a member of the ME5937ED Dual P-Channel MOSFET family.

Datasheet Summary

Description

The ME5937ED is the Dual P-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.

Features

  • RDS(ON)≦62mΩ@VGS=-4.5V.
  • RDS(ON)≦77mΩ@VGS=-2.5V.
  • RDS(ON)≦110mΩ@VGS=-1.8V.
  • RDS(ON)≦180mΩ@VGS=-1.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet preview – ME5937ED-G

Datasheet Details

Part number ME5937ED-G
Manufacturer Matsuki
File Size 920.03 KB
Description Dual P-Channel MOSFET
Datasheet download datasheet ME5937ED-G Datasheet
Additional preview pages of the ME5937ED-G datasheet.

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Full PDF Text Transcription

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ME5937ED/ ME5937ED-G Dual P-Channel 12-V (D-S) MOSFET，ESD Protected GENERAL DESCRIPTION The ME5937ED is the Dual P-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and lower power loss that are needed in a very small outline surface mount package. PIN CONFIGURATION (DFN 2x3 NEP) Top Vie w FEATURES ● RDS(ON)≦62mΩ@VGS=-4.5V ● RDS(ON)≦77mΩ@VGS=-2.5V ● RDS(ON)≦110mΩ@VGS=-1.8V ● RDS(ON)≦180mΩ@VGS=-1.
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